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| www..com 2SC5103 Transistors High speed switching transistor (60V, 5A) 2SC5103 !Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 s at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. !External dimensions (Units : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 5.1 6.5 C0.5 1.0 0.5 0.5 1.5 2.5 9.5 !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Single pulse Pw=100ms ROHM : CPT3 EIAJ : SC-63 Unit V V V A(DC) A(Pulse) W W(Tc=25C) C C Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 100 60 5 5 10 1 10 150 -55~+150 !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SC5103 CPT3 PQ TL 2500 !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob ton tstg tf Min. 100 60 5 - - - - - - 82 - - - - - Typ. - - - - - 0.15 - - - - 120 80 - - 0.1 Max. - - - 10 10 0.3 0.5 1.2 1.5 270 - - 0.3 1.5 0.3 Unit V V V A A V V V V - MHz pF s s s Conditions IC = 50A IC = 1mA IE = 50A VCB = 100V VEB = 5V IC/IB = 3A/0.15A IC/IB = 4A/0.2A IC/IB = 3A/0.15A IC/IB = 4A/0.2A VCE/IC = 2V/1A VCB = 10V , IE = 0.5A , f = 30MHz VCE = 10V , IE = 0A , f = 1MHz IC = 3A , RL = 10 IB1 = -IB2 = 0.15A VCC 30V 2.3 0.8Min. (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) |
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